摘要
探讨了用微波等离子体化学气相沉积法(MPCVD)在Si(100)衬底上加偏压电场和不加偏压电场情况下金刚石膜的成核行为.并经用原子力显微镜(AFM)分析,偏压电场对金刚石成核有促进作用.文章也分析了偏压电场所以能促进金刚石成核的机制.
The nucleation behaviour of diamond films on Si(100) substrates is investigated with and without bias field by MPCVD. By the analysis of AFM, bias field can contribute to the diamond nucleation. The mechanism of contribution of bias field to the diamond nucleation has also been analysed.
出处
《上海大学学报(自然科学版)》
CAS
CSCD
1999年第6期553-556,共4页
Journal of Shanghai University:Natural Science Edition