摘要
Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO_2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.
Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO_2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.
基金
Project supported by the Jiangsu Provincial Foundation for Youths,China(No.09KJB510008) and the Research Foundation for Advanced Talents of Nanjing University of Post and Telecommunications,China(No.NY208056).
