摘要
Time-resolved Kerr rotation spectroscopy is used to determine the sign of the g factor of carriers in a semiconductor material, with the help of a rotatable magnetic field in the plane of the sample. The spin precession signal of carriers at a fixed time delay is measured as a function of the orientation of the magnetic field with a fixed strength B. The signal has a sine-like form and its phase determines the sign of the g factor of carriers. As a natural extension of previous methods to measure the （time-resolved） photoluminescence or time-resolved Kerr rotation signal as a function of the magnetic field strength with a fixed orientation, such a method gives the correct sign of the g factor of electrons in GaAs. Furthermore, the sign of carriers in a （Ga, Mn）As magnetic semiconductor is also found to be negative.
Time-resolved Kerr rotation spectroscopy is used to determine the sign of the g factor of carriers in a semiconductor material, with the help of a rotatable magnetic field in the plane of the sample. The spin precession signal of carriers at a fixed time delay is measured as a function of the orientation of the magnetic field with a fixed strength B. The signal has a sine-like form and its phase determines the sign of the g factor of carriers. As a natural extension of previous methods to measure the （time-resolved） photoluminescence or time-resolved Kerr rotation signal as a function of the magnetic field strength with a fixed orientation, such a method gives the correct sign of the g factor of electrons in GaAs. Furthermore, the sign of carriers in a （Ga, Mn）As magnetic semiconductor is also found to be negative.
基金
Project supported by the National Basic Research Program of China (Grant No. 2009CB929301)
the National Natural Science Foundation of China (Grant No. 10911130232)
