窄禁带半导体的非线性极化率和光学双稳性

The nonlinear susceptibility and optical bistability of narrow gap semiconductors

本文改进了半导体两带模型,计算了窄禁带半导体的非线性极化率.运用所求得的极化率,研究了InSb的光学双稳性,所得到的稳态曲线、临界开关光强与入射光频率的关系以及动态特性都与实验结果有较好的符合.

The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper. Using the susoeptibility obtained, we deal with the optical bistability (OB) of InSb, and figure out the stationary state curve of OB, the relation between critical switching light intensity and frequency of incident light and the transient properties of OB, which are consistent with the experimental results.