CZSi中Ge增强氧外扩散现象

Ge enhances phenomenon of out-diffusion of oxygen in CZSi

在退火处理时，Ｇｅ 易与Ｓｉ 中Ｏ 形成易挥发的ＧｅＯ 复合体，使硅片表面洁净区的形成受氧的外扩散和ＧｅＯ 挥发两种因素制约。即从效果上看，Ｇｅ 增强了氧的外扩散。

When annealing, the formation of a denuded zone has dominated by out diffusion of oxygen and volatile GeO in CZSi doped Ge. That is Ge in CZSi is in favor of intrinsic getting technology of CZSi.