摘要
TeSeIn是一种可逆光存贮介质.分别用单源热蒸发和磁控溅射制备TeSeIn膜.利用透射电镜(TEM)研究了膜的结构和微观形貌.利用俄歇剖面技术(AES-PRO)给出了膜的组分深度剖面,分析了TeSeIn记录介质膜与ZnS保护膜界面间的互扩散大小.利用X光电子能谱(XPS)分析了组元深能级结合能的化学位移.最后根据上面实验结果简要讨论了制备稳定的多元记录介质膜的方法.
TeSeIn thin film is a kind of reversible phase change recording medium. Two kinds of TeSeIn thin films were prepared by thermal evaporation and magnebron spu btering methods respectively. Micromorphology and microstruoture of TeSeIn thin film were studied by TEM method. Using AES-PRO analysis, TeSeln thin film composition depth profile given and the diffusion profile of the interface between TeSeIn thin film and ZnS matching layer are given. The chemical shifts of binding energy of inner electron of Te, Se and In element in TeSeln thin film are given by X PS measurement. A method for preparing multi-component phase change recording thin film with high quality and high stability is discussed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1989年第7期640-645,共6页
Acta Optica Sinica
