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铬酸钠溶液中微量铝硅杂质的脱除 被引量:3

Removal of Trace Al and Si Impurities in Sodium Chromate Solution
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摘要 采用铝硅含量分别为189.65和51.08mg/L的铬酸钠配制溶液,通过常压和高压反应脱除杂质微量铝硅.常压下加入偏铝酸钠调节体系铝硅元素比为6,无需CaO添加剂,60℃下反应40min,几乎可完全脱除杂质硅;在高压釜中通过调节CO2压力为0.4MPa,60℃下反应20min,几乎能完全脱除杂质铝.化学纯铬酸钠脱除铝硅杂质后能达到分析纯级别.高压釜内脱铝的同时铬酸钠发生碳化反应,溶液pH值随反应进行逐渐降低,趋于稳定,显示碳化反应近于平衡. By using simulated sodium chromate solution containing trace AI and Si impurities at 51.08 and 189.65 mg/L respectively, their removal was carried out with the reactions at atmospheric and high pressures. Under atmospheric pressure, when the elemental ratio of Al to Si in the solution with addition of NaAI(OH)4 was 6, and reaction time 40 min at 60℃, Si could be removed completely without addition of CaO. When CO2 pressure was 0.4 MPa in an autoclave, and reaction time 20 min at 60 ℃, Al could be removed completely. Chemically pure sodium chromate could reach the level of analytical purity after removal of AI and Si impurities. During dealumination in the autoclave, the carbonation reaction of sodium chromate also proceeded, pH value was gradually reduced with the reaction, and approached to stable state, showing that the carbonation reaction approached equilibrium.
出处 《过程工程学报》 CAS CSCD 北大核心 2011年第4期590-594,共5页 The Chinese Journal of Process Engineering
基金 国家高技术研究发展计划(863)基金资助项目(编号:2009AA035000) 国家自然科学基金资助项目(编号:21006119) 国家重点基础研究发展规划(973)基金资助项目(编号:2007CB613501)
关键词 铬酸钠 偏铝酸钠 脱硅 脱铝 常压 高压 sodium chromate NaAl(OH)4 desilication dealumination atmosphere high pressure
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