摘要
采用脉冲激光沉积(PLD)法在p型Si(100)衬底上制备了β-FeSi2半导体薄膜,并在沉积系统中进行了800℃、3h的原位高温退火过程,最后采用X射线衍射仪、3D显微镜、原子力电子显微镜、荧光光谱仪分析了实验样品的晶体结构、表面形貌、元素组成、红外吸收和光致发光特性。分析实验结果发现,制备的单相β-FeSi2多晶半导体薄膜结晶质量良好,β-FeSi2在Si(100)衬底上沿(202/220)方向择优生长,且在常温下测得了β-FeSi2半导体薄膜的光致发光谱。
The β-FeSi2 films were successfully fabricated on Si（100） substrate by pulsed laser deposition（PLD） and was annealed at 800℃ for 3 hours. The crystallographic orientation and the elements of the films were investigated by X-ray diffraction（XRD） analysis. Also the 3D microscope and the atomic force microscope（AFM） were used to determine the structural properties and surface images of the films. Fourier transform infrared（FTIR） spectroscopy and photoluminescence spectroscopy were also used to characterize the optical characteristics of the fabricated β-FeSi2 films. The results showed that the β-FeSi2 films were grown along the preferential orientation of （202/220）. Finally the photoluminescence of the β-FeSi2 films were obtained at room-temperature.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2011年第16期23-26,共4页
Materials Reports
基金
国家自然科学基金(1087410311047161)
山东省自然科学基金(Y2007A05)
