期刊文献+

B_2O_3-Li_2O掺杂对丝网印刷Ba_(0.6)Sr_(0.4)TiO_3厚膜微观结构及介电特性的影响

Effects of B_2O_3-Li_2O doping on the microstructure and dielectric properties of screen-printed Ba_(0.6)Sr_(0.4)TiO_3 thick films
下载PDF
导出
摘要 采用丝网印刷工艺并通过有效掺杂B2O3-Li2O制备出了一致性和可重复性良好的Ba0.6Sr0.4TiO3(BST)厚膜。系统研究了B2O3-Li2O掺杂对BST厚膜的低温烧结特性、微观结构、相构成及介电性能的影响。结果表明:随着B2O3-Li2CO3含量的增加,BST厚膜的烧结温度逐渐降低,晶粒尺寸和介电常数显著变小。当B2O3-Li2CO3的掺杂量为4.5%时,BST厚膜可在900℃下低温烧结成瓷,所得样品在20℃和10 kHz频率下的介电常数及介电损耗分别为312和0.003 96,在3×103 V/mm偏场下的可调率达16.2%。 B2O3-Li2O doped Ba0.6Sr0.4TiO3 (BST) thick films with good consistency and repeatability were fabricated by a screen printing technique. The effects of B2O3-Li2O doping on the sintering behavior, microstructure, phase composition and dielectric properties of the BST thick films were investigated systematically. The results indicate that the sintering temperature of BST thick films decreases gradually with increasing B2O3-Li2CO3 content, while their grain size and relative permittivity decrease significantly. When 4.5% (mass fraction) B2O3-Li2CO3 is doped, the sintering temperature of BST thick film reduces to 900 ℃; And, the relative permittivity and dielectric loss of the obtained thick film at 20 ℃ and 10 kHz are 312 and 0.003 96, respectively, while its dielectric tenability at 3×10^3V/mm reaches 16.2%.
出处 《电子元件与材料》 CAS CSCD 北大核心 2011年第9期17-20,共4页 Electronic Components And Materials
基金 广东省教育部产学研结合项目资助(No.2010B090400447) 华中科技大学研究生科技创新基金资助项目(No.HF-07-04-2010-185)
关键词 BST厚膜 丝网印刷 介电性能 可调率 BST thick films screen printing dielectric properties tunability
  • 相关文献

参考文献17

  • 1SENGUPTA L C, SENGUPTA S. Novel ferroelectric materials for phased array antennas [J]. IEEE Trans, 1997, 44(4): 792-797.
  • 2DAVIS JR L, RUBIN L G. Some dielectric properties of barium-strontium titanate ceramics at 3 000 megacycles [J]. J Appl Phys, 1953, 24(9): 1194-1197.
  • 3ZIMMERMANN F, VOIGTS M, WEIL C, et al. Investigation of barium strontium titanate thick films for tunable phase shiflers [J]. J Eur Ceram Soe, 2001, 21(10/11): 2019-2023.
  • 4VARADAN V K, JOSE K A, VARADAN V V. Design and development of electronically tunable microstrip antennas [J]. Smart Mater Struet, 1999, 8(2): 238-242.
  • 5FLAVIIS F D, ALEXOPOULOS N G, STAFSUDD O M. Planar microwave integrated phase-shifter design with high purity ferroelectric material [J]. IEEE MMT-S Dig, 1997, 45(6): 963-969.
  • 6USTINOV A B, TIBERKEViCH V S, RINIVASAN G S, et al. Electric field tunable ferrite-ferroelectric hybrid wave microwave resonators: experiment and theory [J]. J Appl Phys, 2006, 100(9): 093905-093907.
  • 7SU B, BUTTON T W. The processing and properties of barium strontium titanate thick films for use in frequency agile microwave circuit applications [J]. J Eur Ceram Soc, 2001, 21(15): 2641-2645.
  • 8SENGUPTA L C, STOWELL S, NGO E, et al. Thick film fabrication of ferroelectric phase shifter materials [J]. Integ Ferro, 1996, 13(4): 203-214.
  • 9ISHIZAKI T, YAMADA T, MIYAKE H. A first practical model of very small and low insertion loss laminated duplexer using LTCC suitable for W-CDMA portable telephones [J]. IEEE MMT-S Dig, 2000, 1 : 187-190.
  • 10CHENG C, HSIEH T, L1N i. Microwave dielectric properties of glass-ceramic composites for low temperature co-firable ceramic [J]. J Eur Ceram Soc, 2003, 23(14): 2553-2558.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部