期刊文献+

钎料稀土相表面Sn晶须生长的研究 被引量:1

Study of tin whisker growth on RE-phase surface of solders
下载PDF
导出
摘要 为了解对钎料可靠性影响极大的Sn晶须的生长机理,系统研究了钎料稀土相CeSn3、LaSn3及ErSn3表面Sn晶须生长的影响因素。结果表明:稀土相的氧化倾向与时效温度共同影响其表面Sn晶须的生长。室温时效条件下,在稀土相CeSn3与LaSn3表面易出现小尺寸的线状Sn晶须,直径为0.1~0.2μm,而在稀土相ErSn3的表面易出现大尺寸的杆状Sn晶须,直径可达1μm左右;150℃时效条件下,在稀土相ErSn3的表面易出现小尺寸的针状Sn晶须,而在稀土相CeSn3与LaSn3的表面不会出现sn晶须。 To understand the growth mechanism of tin whisker which greatly affect the reliability of solders, influencing factors of tin whisker growing on the surface of CeSn3, LaSn3 and ErSn3 phases of solders were investigated. The results indicate that the growth behaviors of tin whiskers on the surface of the oxidized RE-Sn phases are determined by both the oxidation tendency of the RE-Sn phase and the aging temperatures. During room temperature aging, small sized thread-like tin whiskers, whose diameter is 0.1 μm to 0.2 μm, form on the surface of CeSn3 and LaSn3 phases, however, large sized rod-like tin whiskers, whose diameter can reach up to about 1 μm, form on the surface of ErSn3 phase. During 150 ℃ aging, small sized needle-like tin whiskers form on the surface of ErSn3 phase, and on the contrary, tin whiskers are not found on the surface of CeSn3 and LaSn3 phases.
出处 《电子元件与材料》 CAS CSCD 北大核心 2011年第9期47-49,共3页 Electronic Components And Materials
基金 福建省教育厅资助项目(No.JB08191) 福建工程学院院基金资助项目(No.GY-Z0744)
关键词 稀土钎料 稀土相 SN晶须 生长 RE-solder rare earth phase tin whisker growth
  • 相关文献

参考文献5

二级参考文献43

共引文献38

同被引文献12

  • 1LIANG S W, HSIAO H Y, CHEN C, et al. Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints [J]. J Electron Mater, 2009, 38(12): 2443-2448.
  • 2KUAN W C, LIANG S W, CHEN C. Effect of bump size on current density and temperature distributions in flip-chip solder joints [J]. Microelectron Reliab, 2009, 49(5): 544-550.
  • 3LIANG S W, CHANG Y W, CHEN C, et al. Effect of migration and condensation of pre-existing voids on increase in bump resistance of flip chips on flexible substrates during electromigration [J]. J Electron Mater, 2008, 37(7):962-967.
  • 4GAN H, TU K N. Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder; V-groove samples [J]. JAppl Phys, 2005, 97(6): 063514.
  • 5HE H W, .XU G C, GUO E Electmmigration-induced Bi-rich whisker growth in Cu/Sn-58Bi/Cu solder joints [J]. J Mater Sci, 2010, 45(2): 334-340.
  • 6~IE H W, Xu G c, HA() H, et al. Electromigmtion in lead-free Sn3.8Ag0.7Cu solder reaction couple [C]//2007 8th Intemational Conference on Electronics Packaging Technology ICEPT. NY, USA: IEEE, 2007: 258-261.
  • 7GUO F, XU G C, HE H W. Electromigration behaviors in Sb particle-reinforced composite eutectic SnAgCu solder joints [J]. J Mater Sci, 2009, 44(20): 5595-5601.
  • 8HUANG J S, YEH E C C, ZHANG Z B, et al. The effect of contact resistance on current crowding and electromigration in ULSI multi-level interconnects [J]. Mater Chem Phys, 2003, 77(2): 377-383.
  • 9CHEN S W, CHEN C M. Electromigration effects upon interfacial reactions [J]. JOM-J Miner Met Mater Soc, 2003, 55(2): 62-67.
  • 10郝虎,李广东,史耀武,夏志东,雷永平.SnAgCuY钎料表面Sn晶须的旋转生长现象[J].电子元件与材料,2008,27(11):54-56. 被引量:4

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部