大氢稀释逐层法制备纳米硅薄膜

On Nanocrystal-Si Fabricated by Using Hydrogen-diluted Layer-by-layer Deposition Technique

如何制备高密度、分布可控、尺寸一致的纳米硅量子点,是各种纳米器件研究中首先需要解决的问题。在等离子体增强化学气相沉积系统(PECVD)中,用大氢稀释逐层淀积技术在氮化硅表面上自组装生长高密度、尺寸均匀的硅量子点结构,这种方法充分利用了氢气等离子体在薄膜淀积中诱导晶化作用和对非晶结构的选择刻蚀作用,能够在低衬底温度的条件下,直接获得较为理想的纳米硅薄膜。

The key problem of fabricating silicon-based nanodevices is to prepare the high density nc-Si arrays which are uniform in size and controllable in position.In this paper,we obtain high density,uniform and 6nm sized single layer Si quantum dots（Si-QD） array by using hydrogen-diluted layer-by-layer deposition technique in a plasma enhanced chemical vapor deposition（PECVD） system.