优化高浓度BBr_3工艺

Optimize of High Concentration of BBr_3 Process

文章主要讨论如何通过优化高浓度BBr3扩散工艺,解决P型芯片的VBES参数偏大的问题,从而提高VBES测试成品率。P型芯片发射极杂质扩散的扩散源是液态BBr3,通过O2携带,进入扩散炉内。在炉内高温作用下发生化学反应,释放出B杂质,完成发射区的B掺杂。在化学反应过程中,同时也会生成B2O3,当B2O3含量过高,就会堆积在发射区表面形成"斑污",阻止B杂质的再扩散,导致芯片VBES偏大不合格。通过控制BBr3和O2在扩散炉内的比例,降低B2O3的含量,保证B杂质的正常扩散,提高VBES的合格率。

This article focuses on how to optimize the high concentration of BBr3 diffusion process to address the parameters of P-type chip VBES larger problems in order to improve the VBES test yield.P-type chip emitter impurity diffusion source is the liquid BBr3,O2 to carry through into the diffusion furnace.Under high temperature in the furnace,a chemical reaction,releasing B.In the chemical reaction process,but also generate B2O3,B2O3 content is too high when it will accumulate in the emission region formed on the surface,＂stains＂ to prevent further proliferation of B,resulting in VBES failed.By adjusting the percent of the BBr3 and O2 in the diffusion furnace to reduce the content of B2O3 to ensure normal proliferation of B and improve the pass rate of VBES.