期刊文献+

直拉单晶硅中埚跟比的精确计算研究

The Accurate Calculating of the Crucible Track Proportion in the Czochralski Silicon Single Crystal Growth
下载PDF
导出
摘要 在直拉单晶硅生长过程中,埚跟比(即坩埚上升速度与晶体提拉速度的比值)的设置非常重要,它直接决定了液面位置的稳定性。其不但影响单晶硅成品的质量,而且不合理的埚跟比设置可能会在直拉单晶硅生长过程中出现变晶断苞,导致单晶生长失败。目前国内大多数光伏单晶硅生产商仅仅依靠人工经验来设置埚跟比,其准确性很难保证。采用体积元积分的方法,精确计算埚跟比,解决了由于石英坩埚内表面尺寸的非线性变化带来的埚跟比不准确的问题,提高了液面位置的稳定性和直径测量的准确性,并在实践中验证此方法是切实可行的。 During the process of the Czochralski silicon single crystal growth,the setting of the crucible track proportion(the ratio of the speed of the crucible to the speed of the seed) is quite important,it determines the stability of the melt surface position.Not only the crucible track proportion determines the quality of the Czochralski silicon single crystal,but also the improper value of that proportion could take the damage to the Czochralski silicon single crystal growth which means the failure during its pulling process.At present,the most internal photovoltaic Czochralski silicon single crystal producers make this proportion purely by human's experience,the accuracy is not reliable.The article adopts the method of the volume integral.This method accurately calculates the crucible track proportion,resolves the inexactly crucible track proportion problem which is brought by the nolinear measure of the inner surface of the quartz crucible,improves the stability of the melt surface position and accuracy of the diameter measure of the crystal.This method is feasible practically.
作者 王蕾
出处 《电子工业专用设备》 2011年第8期23-26,40,共5页 Equipment for Electronic Products Manufacturing
关键词 直拉单晶硅 埚跟比 液面位置 石英坩埚 Czochralski silicon single crystal crucible track proportion melt furnace position quartz crucible
  • 相关文献

参考文献3

二级参考文献2

  • 1河北工学院电子系半导体材料研究室.硅单晶制备工艺,1974,:190-190.
  • 2吉林大学半导体系半化教研室.半导体材料,1979,:166-166.

共引文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部