摘要
A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier （UTC） photodi- ode （PD） is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm- diameter PD is as high as 0.83 A/W, and the direct current （DC） saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency （RF） power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current （AC） conditions, the saturation of the UTC-PD is cansed hv cnmnlete field screening at high optical iniectinn levels
A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier （UTC） photodi- ode （PD） is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm- diameter PD is as high as 0.83 A/W, and the direct current （DC） saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency （RF） power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current （AC） conditions, the saturation of the UTC-PD is cansed hv cnmnlete field screening at high optical iniectinn levels
基金
supported by the National Basic Research Program of China(Nos.2011CB301902 and 2011CB301903)
the High Technology Research and Development Program of China(Nos.2007AA05Z429 and 2008AA03A194)
the National Natural Science Foundation of China(Nos.60723002,50706022,60977022,and 51002085)
the Beijing Natural Science Foundation(No. 4091001)
the Industry,Academia and Research Combining and Public Science and Technology Special Program of Shenzhen(No.08CXY-14)
