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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
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摘要 The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.
作者 朱岩 倪海桥 王海莉 贺继方 李密峰 尚向军 牛智川
机构地区 State Key Laboratory for Superlattices and Microstructures
出处 《Optoelectronics Letters》 EI 2011年第5期325-329,共5页 光电子快报（英文版）
基金 supported by the National Natural Science Foundation of China (Nos.90921015 and 10734060) the National Basic Research Program of China (No.2010CB327601)
关键词 Epitaxial growth Gallium arsenide Growth (materials) Molecular beam epitaxy Semiconducting gallium Semiconducting indium Semiconductor quantum wells InGaAs 变质结构 分子束外延 激光器材料 砷化镓 量子阱 基板 线性梯度
分类号 TN248.4 [电子电信—物理电子学] P588.34 [天文地球—岩石学]
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参考文献13

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Optoelectronics Letters
2011年 第5期

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