摘要
An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We find that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.
An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.
基金
supported by the National Natural Science Foundation of China (Nos.60876046 and 60976048)
the Key Project of Education Ministry of (No.209007)
the Tianjin Natural Science Council (No.0ZCKFGX01900)
the Scientific Developing Foundation of Tianjin Education Commission (No.20100723)
the Tianjin Key Discipline of Material Physics and Chemistry
关键词
高稳定性
MOO3
发电装置
阻挡层
光伏
空气
ZNO
电子
Butyric acid
Conversion efficiency
Fatty acids
Indium compounds
Photovoltaic effects
Silver
Tin
Tin oxides
Zinc oxide
