用同步辐射X射线衍射技术分析GaN/Si外延膜的结构与应变

Determine the structure and strain of GaN/Si epilayer by synchrotron radiation X-ray diffraction

选用有AlN和AlGaN缓冲层的GaN/Si作为测试样品,采用同步辐射X射线衍射(SRXRD)技术对样品外延膜(GaN)的几何结构、晶格常量及其应变进行了分析.结果表明,同步辐射X射线衍射实验可以作为一种有效的技术手段,测试固体结构及应变.

Applying synchrotron radiation X-ray diffraction（SRXRD） technology,the geometric structure,lattice constant and strain of GaN/Si with AlGaN and AlN interlayer were analysed and discussed.SRXRD experiment was an effective technique in testing solid structure and analyzing strain.