应用于WCDMA的双频单片SiGe BiCMOS功率放大器

Single-Chip SiGe BiCMOS Power Amplifier for WCDMA Dual-Band Applications

采用0.18μm SiGe BiCMOS工艺设计实现了一款用于3GPP WCDMA 850/2100(band-I/band-V)的双频单芯片功率放大器(PA)。PA采用单端共射级3级级联的结构,具有带模拟开关的片上偏置电路,通过控制偏置电流对两个PA工作状态进行切换。制造的芯片面积为1.82 mm×2.83 mm,片上集成了开关电路、偏置电路和输入匹配、级间匹配电路。在3.3 V电源电压下测试结果表明,对于band-V(CLR)频段,PA的线性输出功率P1 dB为28.6 dBm,5 dBm输入时,功率附加效率PAE,为34%。对于band-I(IMT)频段,PA的P1 dB为26.3 dBm,PAE为31%。

A dual-band MMIC PA was designed and implemented with 0.18 μm SiGe BiCMOS process for 3GPP WCDMA 850/2100（band-I/band-V）applications.The presented PA has three stages with a single-ended and common-emitter structure.It has on-chip biasing circuits with analog switch,which switch the two PAs in turns by controlling the biasing current.The chip has an area of 1.82 mm×2.83 mm with switch circuit,biasing circuit and input matching and inter-stage matching circuits.With 3.3 V power supply,test results indicate that the PA has an output 1dB compression point of 28.6 dBm and a PAE of 34% with 5 dBm input for WCDMA band-V（CLR）,an output 1 dB compression point of 26.3 dBm and a PAE of 31% for WCDMA band-I（IMT）.