摘要
建立了C/SiC材料的热化学平衡烧蚀模型,进行了C/SiC材料烧蚀机理的计算研究和试验验证,理论计算结果和试验数据符合良好。计算结果表明,在高温空气环境下,C/SiC材料的无因次质量烧蚀率"B"与材料中C元素、Si元素的质量分数及温度、压力有关。在同样条件下,C/SiC材料主动氧化烧蚀速率大于C/C复合材料烧蚀速率。
Aerothermo Chemical Equilibrium（ACE） ablation model of C/SiC was established.The ablative performance of C/SiC was studied numerically and experimentally,and the computational results conformed well with the experimentally measured data.The results indicated that the dimensionless mass flux（B） of C/SiC had relation with the mass fraction of C and Si in the material,the temperature and the pressure in high temperature air.The active oxidative ablation rate of C/SiC is greater than C/C composite material under the same condition.
出处
《空气动力学学报》
EI
CSCD
北大核心
2011年第4期496-500,共5页
Acta Aerodynamica Sinica
关键词
碳化硅
主动氧化
烧蚀
Silicon carbide
active oxidation
ablation
