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埋氧厚度对硅膜阈值电压及硼杂质分布的影响

The influence of buried-oxide thickness on threshold voltage and Boron distribution
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摘要 通过模拟局部氧化隔离SOINMOSFET器件硅膜和埋氧界面处的应力分布随埋氧厚度的变化情况,分析其对硼杂质再分布的影响机制,得出SOI NMOSFET器件阈值电压对埋氧厚度的依赖关系.模拟结果表明,在原工艺流程完成后再进行一次退火处理,可以减弱应力对器件阈值电压的影响. The interface stress distribution between silicon and buried-oxide of a LOCOS isolated SOI MOSFET is simulated and its influence to the redistribution of Boron is analyzed.The relationship between threshold voltage and thickness of buried-oxide is obtained.The simulation result shows that the effect of interface stress to threshoel voltage can be reduced by adding an annealing process.
作者 段健
机构地区 西安工程机械专修学院机电系
出处 《西安工程大学学报》 CAS 2011年第3期375-378,共4页 Journal of Xi’an Polytechnic University
关键词 绝缘体上硅 局部氧化隔离 界面应力 silicon-on-insulator LOCOS isolation interface stress
分类号 TN304 [电子电信—物理电子学]
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参考文献7

  • 1HUANG C L, SOLEIMANI H R, GRULA G J, et al. LOCOS-induced stress effects on thin-film SOI devices [ J ]. IEEE Trans Electron Devices, 1997,44 (4) : 646.
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二级参考文献6

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西安工程大学学报
2011年 第3期

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