退火处理对W:Bi_4Ge_3O_(12)和Bi_(12)GeO_(20)晶体发光性能的影响

Effects of Annealing Treatment on the Photoluminescence Properties of W:Bi_4Ge_3O_(12) and Bi_(12)GeO_(20) Crystals

通过提拉法制备了W∶Bi4Ge3O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等。W∶Bi4Ge3O12的可见光发光强度比纯Bi4Ge3O12有所增强,而且N2中退火处理对W∶Bi4Ge3O12发光有进一步增强作用。Bi12GeO20在N2中退火处理后在745 nm附近有发光峰,其衰减时间为10μs左右。两种晶体退火处理后发光均增强,认为是低价Bi离子发光所致。

W∶Bi4Ge3O12 and Bi12GeO20 crystals were prepared by Czochralski（Cz） method.The absorption,photoluminescence（PL） and PL lifetime spectra were investigated.The results revealed the PL intensity of W∶Bi4Ge3O12 was stronger than that of Bi12GeO20,and annealing in N2 can increase the PL intensity of W∶Bi4Ge3O12.Near infrared PL（at about 745 nm） was observed in Bi12GeO20 annealed in N2,and the lifetime was about 10 μs.The mechanisms of luminescence in W∶Bi4Ge3O12 and annealed Bi12GeO20 was discussed.