期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

原位钝化和催化剂钝化沟道阱能带计算

Band Calculation for Heterostructures Passivated by In-situ Grown Si_3N_4 and CATCVD Grown Si_3N_4
下载PDF
导出
摘要 把Si3N4/AlGaN界面看成新的异质结,自洽求解薛定谔方程和泊松方程,建立起原位钝化和CATCVD钝化异质结构的新能带模型。运用这一模型,研究了原位钝化和CATCVD钝化异质结沟道阱的电子气密度、能带结构和输运性能,解释了相应的实验结果。在此基础上研究了这些新钝化异质结沟道阱能带的优化设计。优化设计的钝化复合势垒沟道阱电子气密度高达3.138×1013cm-2,而且沟道电子保持强量子限制,预期能达到高输运性能。讨论了运用这种钝化沟道阱来设计外沟道和二维异质结构、抑制电流崩塌的新课题。 A new band model for heterostructures passivated by in-situ grown Si3N4 and CATCVD grown Si3N4 is established through the self-consistent solution of Poisson equation and Schrdinger equation by regarding the interface of Si3N4/AlGaN as a new heterointerface.The electron densities in channel,band structures,and electron transport performance for the heterostructures passivated by in-situ grown Si3N4 and CATCVD grown Si3N4 are investigated using this new model,from which the published experimental results are explained.An optimized design for this passivated heterostructure is given upon this foundation,where the electron density in channel has reached 3.138×1013 cm-2,and the electron wave functions are confined in channel quantum well perfectly,from which high transport performance can be expected.By using this passivated heterostructure as outer channels beside the gate,a new problem to weaken the current collapse using two dimensional heterostructure is discussed.
作者 薛舫时
机构地区 南京电子器件研究所
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2011年第4期319-327,共9页 Research & Progress of SSE
基金 创新基金资助项目(JJ0901)
关键词 原位钝化氮化硅 催化剂化学气相淀积氮化硅 氮化硅/半导体异质结 铝镓氮/铝铟氮复合势垒 能带剪裁 动态电流崩塌模型 二维异质结构 passivation with in-situ grown Si3N4 CATCVD grown Si3N4 Si3N4/semiconductor heterostructure AlGaN/AlInN compound barrier band tailoring dynamic current collapse model two dimensional heterostructure
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献13

  • 1Derluyn J, Boeykens S, Cheng K, et al. Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer[J].J Appl Phys, 2005,98:054501-1-5.
  • 2Derluyn J, Van Hove M, Visalli D, et al. Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of In-situ grown Si3N4 [C]. Electron Devices Meeting, 2009:7.4.1-4.
  • 3Higashiwaki M, Hirose N, Matsui T. Cat-CVD Si3N4-passivated AlGaN-GaN HFETs with thin and high A1 composition barrier layers[J]. IEEE Electron Device Lett, 2005,26(3) : 139-141.
  • 4Higashiwaki M, Onojima N, Matsui T, et al. Effects of SiN passivation by catalytic chemical vapor deposi- tion on electrical properties of AlGaN/GaN heterostructure field-effect transistors[J]. J Appl Phys,2006,100:033714-1-6.
  • 5Onojima N, Higashiwaki M, Suda J. Reduction in potential barrier height of AIGaN/GaN heterostructures by SiN passivation [J]. J Appl Phys, 2007, 101: 043703-1-6.
  • 6Higashiwaki M, Mimura T, Matsui T. AIN/GaN insulated-gate HFETs using cat-CVD SiN[J]. Electron Device Lett, 2006,27(9) :719-721.
  • 7Higashiwaki M, Mimura T, Matsui T. Enhancementmode AlN/GaN HFETs using cat-CVD SiN[J]. IEEE Tran Electron Devices, 2007,54(6) : 1566-1569.
  • 8Higashiwaki M, Mimura T, Matsui T. AIGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation layers [J]. Electron Device Lett, 2006,27(1) :16-18.
  • 9Levinshtein M E, Ivanov P A, Asif Khan M, et al. Mobility enhancement in AlGaN/GaN metal-oxidesemiconductor heterostructure field effect transistors [J]. Semicond Sci Technol, 2003,18:666-669.
  • 10Kordo S P, Gregu sova D, Stoklas R, et al. Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor[J].Appl Phys Lett, 2007,90:123513-1-3.

二级参考文献41

  • 1薛舫时.AlGaN/GaN HFET的优化设计[J].固体电子学研究与进展,2007,27(2):163-169. 被引量：3
  • 2薛舫时.GaN异质结的二维表面态[J].Journal of Semiconductors,2005,26(10):1939-1944. 被引量：8
  • 3[1]WU Y F,MOORE M,WISLEDER T,et al.40-W/mm Double Field-plated GaN HEMTs[C] //IEEE Device Research Conference,2006:151-152.
  • 4[2]MEDJDOUB F,CARLIN J F,GONSCHOREK M,et al.Small-signal Characteristics of AlInN/GaN HEMTs[J].Electron.Lett.,2006,42(13):779-780.
  • 5[3]MAEDA N,TAWARA T,SAITOH T,et al.Doping Design of GaN-based Heterostructure Field-effect Transistors with High Electron Density for High-power Applications[J].phys.stat.sol.(a),2003,200(1):168-174.
  • 6[4]HIGASHIWAKI M,MIMURA T,MATSUI T,et al.Enhancement-mode AlN/GaN HFETs Using Cat-CVD SiN[J].IEEE Electron Devices,2007,54(6):1 566-1 570.
  • 7[5]CHINI A,COFFIE R,MENEGHESSO G,et al.2.1A/mm Current Density AlGaN/GaN HEMT,Electronics Lett.,2003,39(7):625-626.
  • 8[6]WU Y F,SAXLER A,MOORE M,et al.30-W/mm GaN HEMTs by Field Plate Optimization[J].IEEE Electron Device Lett.,2004,25(3):117-119.
  • 9[7]WU Y F,MOORE M,WISLEDER T,et al.High-gain Microwave GaN HEMTs with Source-terminated Field-plates[C].IEDM Tech.Dig.2004:1-2.
  • 10[8]SHEN L,HEIKMAN S,MORAN B,et al.AlGaN/AlN/GaN High-power Microwave HEMT[J].IEEE Electron Device Lett.,2001,22(10):457-459.

共引文献13

固体电子学研究与进展
2011年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部