摘要
InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.
InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.
基金
Project supported by the National Natural Science Foundation of China (Grant No.50602018)
the Science and Technology Program of Guangdong Province,China (Grant Nos.2010B090400456,2009B011100003,and 2010A081002002)
the Science and Technology Program of Guangzhou City,China (Grant No.2010U1-D00191)
