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水热法制备Bi_4Si_3O_(12)粉体 被引量:3

Hydrothermal synthesis of Bi_4Si_3O_(12) powders
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摘要 以Bi2O3和SiO2为原料,一定浓度的双氧水为溶剂,采用水热法制备了硅酸铋(Bi4Si3O12)粉体。用X射线衍射和扫描电子显微镜分析了合成粉体的相结构和形貌,用单因素实验法研究了反应时间、反应温度以及双氧水浓度对产物物相组成的影响,结果表明,在220℃下反应48h,H2O2浓度4%~6%的条件下,可以合成微米级的纯相硅酸铋。 Bismuth orthosilicate (Bi4Si3O12, BSO)powders were prepared by the hydrothermal synthesis method,using Bi203 and SiO2 as the raw materials and hydrogen peroxide solution as the solvent. The phase and the morphology of the as-synthesized powders were studied by X-ray powder diffraction and scanning electron microscope. The influence of the reaction time, reaction temperature, and the concentration of the hydrogen peroxide on the phase composition of the products were studied through experiments. Experiments show that pure phase of bismuth orthosilicate with micrometer size single factor can be synthesized at 220 ℃ for 48 h with H2O2 concentration of 4% - 6%.
出处 《应用化工》 CAS CSCD 2011年第8期1357-1359,共3页 Applied Chemical Industry
基金 陕西省教育厅专项(09JK547) 西安建筑科技大学基础基金项目(JC1008)
关键词 硅酸铋 水热合成 X射线衍射 扫描电子显微镜 bismuth orthosilicate hydrothermal synthesis X-ray powder diffraction scanning electron microscope.
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  • 1徐家跃,王红,何庆波,申慧,清水肇,向卫东.坩埚下降法生长硅酸铋闪烁晶体(英文)[J].硅酸盐学报,2009,37(2):295-298. 被引量:9
  • 2储耀卿,葛增伟,吴国庆,殷学技,唐林耀.大尺寸优质声光晶体TeO_2的生长[J].人工晶体学报,2004,33(5):810-812. 被引量:4
  • 3廖晶莹,叶崇志,杨培志.锗酸铋闪烁晶体的研究综述[J].化学研究,2004,15(4):52-58. 被引量:20
  • 4叶崇志,廖晶莹,杨培志,谢建军,罗澜,曹顿华.F,Y双掺钨酸铅晶体的发光性能和微观缺陷[J].物理学报,2006,55(4):1947-1952. 被引量:10
  • 5吴江,张龙,赵忠民,潘传增,张靖,吴铮.微拉法制备氧化物共晶复相陶瓷的研究进展[J].科学技术与工程,2007,7(4):589-593. 被引量:4
  • 6Weber M J, Monchamp R R. Lunfineseence of Bi4Ge3O12: spectral and decay properties. J Appl Phys, 1973, 44( 12):5 495 -5 499.
  • 7Cho Z H,Farukhi M R. BGO as a potential scintillation detector in positron cameras. Journal of Nuclear Medicine, 1977,18 (8) : 840 - 844.
  • 8Farukhi M R. Recent developments in scintillation detectors lor X- Ray CT and positron CT applications . IEEE Transactions on Nuclear Science, 1982, 29(3) : 1 237- 1 249.
  • 9obayashi Masaaki, Ishii Mitsuru,Harada Kenji, et al. Bismuth silicate Bi4Si3O12, a faster scintillator than bismuth germanate Bi4Ge3O12 . Nuclear Instruments and Methods in Physics Research Section A, 1996, 372( 1- 2) :45 - 50.
  • 10Fei Yiting, Fan Shiji, Sun Renying, el al. Study on phase diagram of Bi2 O3 - SiO2 system for bridgman growth of Bi4 Si3O12: single crystal. Progress in Crystal Growth and Characterization of Materials, 2000, 40(1-4):183-188.

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  • 1TIAN QingQuan, WANG XiuFeng, YU ChengLong, JIANG HongTao, ZHANG ZhengGuang, WANG Yan & LIN SheBao School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi’an 710021, China.Domain structure and defects of highly ordered Bi_4Si_3O_(12) micro-crystals[J].Science China(Technological Sciences),2009,52(8):2295-2301. 被引量:8
  • 2柏朝晖,巴学巍,贾茹,刘波,肖志义,张希艳.硅酸铋(BSO)纳米粉体的制备与表征[J].无机化学学报,2006,22(7):1327-1329. 被引量:8
  • 3王燕,D,王秀峰,于成龙,江红涛.Bi_2O_3-SiO_2系统高温熔体研究进展[J].硅酸盐通报,2007,26(2):336-339. 被引量:1
  • 4王燕,王秀峰,于成龙,田清泉.Bi_2O_3-SiO_2系统固相反应研究[J].硅酸盐通报,2007,26(2):378-381. 被引量:6
  • 5V. M. Skorivo,V. P. Zhereb. Metastable states in bismuth- containing oxide systems[J]. Inorganic Materials, 2003,39 (2):121-145.
  • 6Yiting Fei, Shiji Fan, Renying Sun, et al. Study on phase diagram of BieOa-SiO2 system for bridgman growth of BiiSiaOte single crystal[J]. Progress in Crystal Growth and Characterization of Materials, 2000,40 183-188.
  • 7Kobayashi M,Ishii M,Harada K,et al.Bismuth Silicate Bi4Si3O12,a Faster Scintillator Than Bismuth Germanate Bi4Ge3O12[J].Nucl.Instrum.Meth.Phys.Res.A,1996,372:45-50.
  • 8Kobayashi M,Morimoto K,Yoshida H,et al.Bismuth Silicate as a Scintillating Material for Electromagnetic Shower Detector[J].Nucl.Instr.and Meth.1983,205(1-2):133-136.
  • 9Kobayashi M,Harada K,Hirose Y,et al.Large-Size Bismuth Silicate(Bi4Si3O12)Scintillating Crystals of Good Quality[J].Nucl.Instrum.Meth.Phys.Res.A,1997,400:392-400.
  • 10Fei Y T,Fan S J,Sun R Y,et al.Bridgman Growth of Bi4Si3O12Scintillation Crystals and Doped Effects on Radiation Resistance[J].Prog.Cryst.Growth Charact.,2000,40(1-4):189-194.

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