用古斯-亨兴位移研究PMN-PT电光陶瓷的电光效应

Study on Electro-Optic Effect of PMN-PT Ceramics Using Goos-Hnchen Shift

根据对称金属包覆电光波导中本征损耗与古斯-亨兴(Goos-Hnchen)位移的理论公式,导出了古斯-亨兴位移与作用于波导两侧电压的二次关系公式。用622μm厚度的四方相铌镁酸铅-钛酸铅(PMN-PT)透明电光陶瓷片作为导波层制备了对称金属包覆波导,测量了古斯-亨兴位移与作用于波导两侧电压的关系曲线,计算了所用透明电光陶瓷片的二次电光系数。实验结果与理论分析一致。

The Goos-H/inchen shift at both sides of the waveguide is conducted, which gives rise to a quadric-curve relation between Goos-H/inchen shift and the applied voltage, based on the theoretical analysis of the intrinsic loss in a symmetrical metal-cladding electro-optic waveguide. A symmetrical metal-cladding waveguide is fabricated with a 622μm-thick Pb（Mgl/a Nb2/3 O3 ）-PbTiO3 （PMN-PT） transparent ceramic which serves as the guiding layer of the waveguide. Measurements of the relation between Goos-Hfinchen shift and the applied voltage are carried out and the quadratic electro-optic coefficient of the PMN-PT ceramic is obtained. Experimental results are agreed well with the numerical simulations.