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Characteristics of bottom gate a-Si TFT array for AM-OLEDs

Characteristics of bottom gate a-Si TFT array for AM-OLEDs
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摘要 The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology. The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.
作者 张浩 陈龙龙 石继锋 李春亚 路林 李喜峰 张建华
机构地区 School of Mechatronics Engineering and Automation Key Laboratory of Advanced Display and System Application (Shanghai University)
出处 《Journal of Shanghai University(English Edition)》 CAS 2011年第4期239-241,共3页 上海大学学报（英文版）
基金 supported by the National High-Technology Research and Development Program of China(Grant Nos.2008AA03A336,2010AA03A337)
关键词 morphous silicon （aoSi） TRANSISTOR ARRAY stability morphous silicon （aoSi）, transistor, array, stability
分类号 TN321.5 [电子电信—物理电子学]
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参考文献10

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Journal of Shanghai University(English Edition)
2011年 第4期

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