248 nm与808 nm激光电化学刻蚀不同材料的实验研究

Experimental Study on 248 nm and 808 nm Laser Electrochemical Etching of Different Materials

为探讨不同激光电化学刻蚀的工艺特性,采用两种激光(KrF:248 nm,20 ns和半导体激光:808 nm连续)作为光源,聚焦激光照射浸于溶液中的阳极上,实现激光诱导电化学刻蚀材料。在实验的基础上,通过对金属和半导体材料刻蚀的比较,分析了不同激光电化学刻蚀不同材料的工艺特点。讨论两种激光对半导体与金属的不同刻蚀机制,并比较了这两种激光对不同材料的刻蚀性能。实验表明,248 nm激光电化学刻蚀工艺中直刻占主要部分,该工艺刻蚀硅比刻蚀金属有更好的刻蚀速率;808 nm激光诱导电化学刻蚀工艺是一个光热刻蚀过程,该工艺不适合刻蚀半导体材料。

To explore the differen t characteristics of the laser electrochemical etching process, this paper adopts 808nm semiconductor laser and 248 nm excimer laser as light source. The experiments of micromachining materials by laser-induced electrochemical etching are carried out. On the basis of experiment, the characteristic of laser electrochemical etching is analyzed in detail by comparing etching metal to semiconductor. Different etching mechanism of two lasers was discussed, and the properties of two lasers etching different material were compared. The experiments show that, 248 nm laser electrochemical etching process accounts for the main part of the direct etching, the etching process of silicon etching metal better than the etching rate; the process of 808nm laser electrochemical etching is laser photo-thermal effect which helps to induce electrochemical dissolution. It is unsuitable for 808nm laser electrochemical etching process to etch semiconductor.