SiC_p/Cu合金电子封装壳体半固态成形模拟

Simulation of Semi-solid Forming Electronic Packaging Shell with SiC_p/Cu Alloy

采用有限元软件Deform-3DTM对SiCp/Cu合金电子封装壳体的触变成形过程进行了数值模拟。对触变成形过程中坯料的单元体网格变化、金属流动速度场、等效应力场及挤压杆速度对等效应力的影响等进行了分析。模拟结果表明,在半固态温度为910℃、挤压杆速度为100mm/s时,可以得到SiCp含量较高且分布较均匀的SiCp/Cu合金电子封装壳体,且能满足电子封装壳体的要求。

Thixoforming process of electronic packaging shell with SiCp/Cu alloy was simulated by the finite element software Deform-3D. Effects of some parameters, such as grid change of unit, flow velocity of liquid metal and equivalent stress field as well as punching velocity, on equivalent stress were simulated in the semi-solid billets during thioxforming process. The results show that SiCp/Cu alloy electronic packaging shell with high content and uniformly distributed SiC particle can be produced at 910℃ and punching velocity of 100 mm/s, meeting the requirements of electronic packaging shell.