摘要
CCD键合工艺要求硅铝丝依次在Au焊盘和Al焊盘上完成一、二焊的超声键合。文章分别以Au焊盘和Al焊盘为研究对象,通过调整键合中的超声功率和线弧高度参数,在超声功率为20%～50%、线弧高度为1 000～1 800μm范围内,设定48组不同的实验条件进行键合,以键合后拉力测试结果为表征量,采用工序能力指数(Cpk)的统计方法进行归纳比较,从中选取最优实验参数用于大面阵CCD键合工艺,以达到优化键合参数的目的。
Wire bonding process of Charge-coupled devices （CCD）includes two steps： ultrasonic bonding alloyed Al wires to AI pad at the source and to Au pad at the destination. Taking A1 pad and Au pad as the research objects, 48 groups of bonding experiments were carried out under different conditions, for which the ultrasonic power ranges 20%-50% and the loop height ranges 1 000 - 1 800 μm. Experimental results were analyzed using Complex Process Capability index （Cpk） technique, and then the optimum bonding parameters were obtained for large area CCD bonding process.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第4期521-524,528,共5页
Semiconductor Optoelectronics
