摘要
Based on Fermi’s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/(111)Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar optical phonon and totalscattering rate models. It was found that the total scattering rate of the hole in strained Si/(111)Si1 xGexdecreased obviouslywith the increasing stress when energy was 0.04 eV. In comparison with one of the unstrained Si, the total hole scattering rateof strained Si/(111)Si1 xGexdecreased about 38% at most. The decreasing hole scattering rate enhanced the hole mobility instrained Si materials. The result could provide valuable references to the research on hole mobility of strained Si materials andthe design of PMOS devices.
Based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/（111）Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar optical phonon and totalscattering rate models. It was found that the total scattering rate of the hole in strained Si/（111）Si1 xGexdecreased obviouslywith the increasing stress when energy was 0.04 eV. In comparison with one of the unstrained Si, the total hole scattering rateof strained Si/（111）Si1 xGexdecreased about 38% at most. The decreasing hole scattering rate enhanced the hole mobility instrained Si materials. The result could provide valuable references to the research on hole mobility of strained Si materials andthe design of PMOS devices.
基金
supported by the National Ministries and Commissions(Grant Nos. 51308040203, 9140A08060407DZ0103 and 6139801)
the Fundamental Research Funds for the Central Universities (Grant No.72105499)
