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高压快速离化半导体开关及其脉冲压缩特性 被引量：5

High voltage semiconductor fast ionization device and its properties of pulse compression
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摘要 介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50Ω负载下,将一输入脉冲幅度1.7kV、脉宽4μs、重频2kHz高压脉冲,通过FID压缩成脉冲幅度1 985V、脉宽90ns、重频2kHz的高压脉冲。 The special structure and working principle of all-solid-state fast ionization device（FID） are studied. The com pression characteristics in pulse voltage amplitude and pulse width of FID are given through experiment study at different exterior bias voltages. The experimental result of transforming the input pulse of voltage 1.7 kV, width 4 μs, repetition frequency 2 kHz into the output pulse of voltage 1 985 V, width 90 ns, repetition frequency 2 kHz is obtained from FID compression under 50Ωload.
作者 梁勤金 石小燕 潘文武
机构地区 中国工程物理研究院应用电子学研究所
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2011年第8期2141-2144,共4页 High Power Laser and Particle Beams
基金 国家高技术发展计划项目
关键词 高压脉冲 快速离化器件 半导体开关 等离子体 脉冲压缩 high voltage pulse fast ionization devices semiconductor switch plasma pulse compression
分类号 TN78 [电子电信—电路与系统]
  • 相关文献

参考文献11

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二级参考文献12

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共引文献16

同被引文献35

  • 1梁步阁,朱畅,张光甫,袁乃昌.高功率全固态微波纳秒级脉冲源的设计与应用[J].国防科技大学学报,2004,26(6):38-43. 被引量：34
  • 2徐波,王占国,万寿科,孙红,张辉,杨锡权,林兰英.EL2光淬灭过程中光电导增强现象原因新探[J].Journal of Semiconductors,1994,15(5):324-328. 被引量：2
  • 3梁勤金,石小燕,冯仕云,陈冀.高功率半导体开关DSRD在UWB雷达中的应用[J].现代雷达,2005,27(5):69-71. 被引量：9
  • 4陈洪斌,孟凡宝,张运俭,李爱萍,丁恩燕,陆巍,周传明.利用DBD开关开展脉冲压缩技术研究[J].高电压技术,2005,31(6):44-45. 被引量：4
  • 5Efanov V M.Fast ionization devices(FID):a new class of superpower switches[C] //IEEE Conference Record of Power Modulator Symposi-um.2000:66-68.
  • 6Efanov V M,Karavaev V V,Kardo-Sysoev A F,et al.Fast ionization dynistor(FID):a new semiconductor superpower closing switch[C] //IEEE Conference Record of Power Modulator Symposium.1997:988-991.
  • 7Grekhov I V,Korotkov S V,Khristyuk D V.A switch based on reverse switch on dynistor with a diode sharpener of switched current pulse[J].Instruments and Experimental Techniques,2002,45(5):671-673.
  • 8Fontana R J.Recent system application of short-pulse UWB technology[J].IEEE Trans on Microwave Theory and Techniques,2004,52(9):2087-2096.
  • 9Zaoulin S V.High repetition frequency picosecond pulse generation[C] //IEEE Conference Record of Power Modulator Symposium.2002:403-405.
  • 10Grekhov I V.Physical basis for high power semiconductor nanosecond and sub-nanosecond switches[J].High-Voltage Engineering,1998,11(5):1318-1320.

引证文献5

二级引证文献13

强激光与粒子束
2011年 第8期

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