MeV能量的重离子辐照GaN的HRXRD研究

A HRXRD Study of GaN Irradiated with MeV Heavy Ions

分别进行了2.3 MeV20Ne8+离子和5.0 MeV84Kr19+离子辐照GaN样品的实验,并对实验样品进行了HRXRD的分析。结果发现,随着这两种离子辐照剂量的增大,GaN的HRXRD谱(0002)衍射峰的峰位出现了向小角侧有规律的移动,并在较高剂量时衍射峰发生分裂。同时,对衍射峰的峰位的移动和峰形的变化等现象反映的辐照损伤机制进行了研究,并探讨了电子能损与核能损各自在晶格损伤中的作用。

Irradiation experiments of gallium nitride（GaN） with 2.3 MeV 20Ne8＋ and 5.0 MeV 84Kr19＋ respectively were performed.The irradiated samples were analyzed using the high-resolution X-ray diffraction（HRXRD） spectrometry.It was found that the diffraction peak of GaN（0001） exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions,and the diffraction peak split into a few sub-peaks at higher irradiation dose.Underlying mechanisms of the observed peak shift and split were investigated,the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.