摘要
This paper presents a 3.4-3.6 GHz power amplifier（PA） designed and implemented in InGaP/GaAs HBT technology.By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB,several problems are resolved,such as resonant frequency point migration,worse matching and lower gain caused by parasitics inside and outside of the chip.Under V_（cc） = 4.3 V and V_（bias） = 3.3 V,a P_（1dB） of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%,the 2nd and 3rd harmonics are -64 dBc and -51 dBc,respectively. In addition,this PA shows a linear gain more than 28 dB with S_（11）-12.4dB and S_（22）-7.4 dB in 3.4-3.6 GHz band.
This paper presents a 3.4-3.6 GHz power amplifier（PA） designed and implemented in InGaP/GaAs HBT technology.By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB,several problems are resolved,such as resonant frequency point migration,worse matching and lower gain caused by parasitics inside and outside of the chip.Under V_（cc） = 4.3 V and V_（bias） = 3.3 V,a P_（1dB） of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%,the 2nd and 3rd harmonics are -64 dBc and -51 dBc,respectively. In addition,this PA shows a linear gain more than 28 dB with S_（11）-12.4dB and S_（22）-7.4 dB in 3.4-3.6 GHz band.
基金
Project supported by the National Science and Technology Major Projects of China(Nos.2009ZX03007-001,2010ZX03007-002)
