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An SPICE model for phase-change memory simulations

An SPICE model for phase-change memory simulations
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摘要 Along with a series of research works on the physical prototype and properties of the memory cell,an SPICE model for phase-change memory(PCM) simulations based on Verilog-A language is presented.By handling it with the heat distribution algorithm,threshold switching theory and the crystallization kinetic model,the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell.In particular,it can emulate the cell's temperature curve and crystallinity profile during the programming process,which can enable us to clearly understand the PCM's working principle and program process. Along with a series of research works on the physical prototype and properties of the memory cell,an SPICE model for phase-change memory(PCM) simulations based on Verilog-A language is presented.By handling it with the heat distribution algorithm,threshold switching theory and the crystallization kinetic model,the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell.In particular,it can emulate the cell's temperature curve and crystallinity profile during the programming process,which can enable us to clearly understand the PCM's working principle and program process.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期70-73,共4页 半导体学报(英文版)
基金 Project supported by the National Integration Circuit Research Program of China(No.2009ZX02023-003) the National Basic Research Program of China(Nos.2007CB935400,2010CB934300,2011CB309602,2011CB932800) the National Natural Science Foundation of China(Nos.60906004,60906003,61006087,61076121) the Science and Technology Council of Shanghai(Nos.09QH1402600, 1052nm07000)
关键词 phase-change memory SPICE VERILOG-A phase-change memory SPICE Verilog-A
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  • 1Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450.
  • 2Lai S et al 2001 IEEE Int. Electron Devices Meeting (Washington DC 8-10 December 2003) p 901.
  • 3LIU Bo et al 2005 Physics 34 279.
  • 4Ielmini D et al-2004 IEEE Electron. Device Lett. 25 507.
  • 5Agostino Pirovano et al 2004 IEEE Electron. Devices 51 452.
  • 6Bacchini Francine et al 2007 ACM/IEEE Int. Design Automation Conference (San Diego, California, USA 4-8 June 2007) p 22.
  • 7Wei X Q et al 2006 IEEE Trans. Electron. Devices 53 56.
  • 8Fantini P et al 2006 IEEE Int. Simulation of Semiconductor Processes and Devices (Monterey, California, USA 6-8 September 2006) p 162.
  • 9Liao Yi-Bo et al 2008 Integrated Circuit Design and Technology and Tutorial (Grenoble, France 2-4 June 2008) p 199.
  • 10Kwong K C et al 2008 ICSICT Solid-State and Integrated-Circuit Technology (Beijing, China 20-23 October 2008) p 492.

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