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Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD 被引量：2

Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD
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摘要 Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s. Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.
作者 武春波 周玉琴 李国荣 刘丰珍
机构地区 Graduate University of the Chinese Academy of Sciences
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期147-150,共4页 半导体学报（英文版）
基金 Project supported by the National Key Basic Research Program of China(No.2011CBA00705) the Knowledge Innovation Project of the Chinese Academy of Sciences(No.KGCX2-YW-351).
关键词 silicon heterojunction PECVD interface properties initial transient state of plasma hydrogen plasma pre-treatment silicon heterojunction PECVD interface properties initial transient state of plasma hydrogen plasma pre-treatment
分类号 TN304.055 [电子电信—物理电子学]
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参考文献16

  • 1Taguchi M, Terakawa A, Maruyama E, et al. Obtaining a higher Voc in HIT cells. Prog Photovolt: Res Appl, 2005, 13:481.
  • 2Tsunomura Y, Yoshimine Y, Taguchi M, et al. Twenty-two percent efficiency HIT solar cell. Solar Energy Materials & Solar Cells, 2009, 93:670.
  • 3Tardon S, Bruggemann R. Characterization of the interface properties in a-Si:H/c-Si heterostructures by photoluminescence. J Phys D: Appl Phys, 2010, 43:115102.
  • 4Fujiwara H, Kondo M. Effects of a-Si:H layer thicknesses on the performance ofa-Si:H/c-Si heterojunction solar cells. J Appl Phys, 2007, 101:054516.
  • 5Nawaz M. Design analysis of a-Si/c-Si HIT solar ceils. Adv Sci Technol, 2010, 74:131.
  • 6Hrunski D, Grahlert W, Beese H, et al. Control of plasma process instabilities during thin silicon film deposition. Thin Solid Films, 2009, 517:4188.
  • 7Van den Donkera M N, Schmitza R, Appenzellera W, et al. The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells. Thin Solid Films, 2006, 511:562.
  • 8Nakayama Y, Ohtsuchi T, Nakano M, et al. Initial transient phenomena in the plasma decomposition of silane. J Non-Cryst Solids, 1985, 77(2): 757.
  • 9Van den Donker M N, Kilper T, Grunsky D, et al. Microcrystalline silicon deposition: process stability and process control. Thin Solid Films, 2007, 515:7455.
  • 10Liu Fengzhen, Cui Jiedong, Zhang Qunfang, et al. Dark I-V characteristics and carrier transport mechanism in nanocrystalline silicon thin film/erystalline silicon hetero-junction solar cells. Journal of Semiconductors, 2008, 29(3): 29.

同被引文献19

  • 1Kinoshita T, Fujishima D, Yano A, et al, The Approaches for High Eftlciency HITTM Solar Cell with Very Thin ( < 100 m) Silicon Wafer over 23%, C [ C ]. 26th European Photovoltaic Solar Energy Conference, 2011:871-874.
  • 2Angermann H, Rappich J, Korte L, et al. Wet-chemical Passivation of Atomically Flat and Structured Silicon Substrates for Solar Cell Application [ J]. J Appl. Su Sci. ,2008,254:3615-3625.
  • 3Angermann H. Passivation of Structured p-type Silicon Interfaces : Effect of Surface Morphology and Wet-chemical Pre-treatment [ J ]. J Appl. Su(. Sci. , 2008, 254:8067-8074.
  • 4Angermann H, Conrad E, Korte Let al. Passivation of Textured Substrates for a-Si: I-I/c-Si Hetero-junction Solar Cells:Effect of Wet-chemical Smoothing and Intrinsic a-Si : H Interlayer[ J]. J Mat. Sci. Eng. B ,2009, 159-160:219-223.
  • 5Van den Donker M N, Kilper T, Grunsky D, et al. Microcrystalline Silicon Deposition: Process Stability and Process Control [J ]. J Thin Solid Filma ,2007, 515:7455.
  • 6Nakayama Y, Ohtsuchi T, Nakano M, et al. Initial Transient Phenomena in the Plasma Decomposition of Silane [ J ]. J Non-Cryst Solids, 1985,77 (2) :757.
  • 7Mackenzie K D, Eggert J R, Leopold D J, et al.Structural, electrical, and optical properties ofa- Sii. Ge H and an inferred electronic band structure[J]. Physical ReviewB, 1985,31(4): 2198-2212.
  • 8Deng Xunming, Liao Xianbo, Han Sijin, et al.Amorphous silicon and silicon germanium materials forhigh-efficiency triple-junction solar cells [J]. SolarEnergy Materials and Solar Cells, 2000, 62(1-2): 89-95.
  • 9Yang Jeffrey, Yan Baojie,Guha Subhendu. Amorphousand nanocrystalline silicon- based multi- junction solarcells[J].Thin Solid Films, 2005,487(1-2): 162-169.
  • 10Yang J, Banerjee A, Guha S. Triplejunctionamorphous silicon alloy solar cell with 14.6% initial and13.0% stable conversion efficiencies [J]. AppliedPhysics Letters, 1997,70: 2975-2977.

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Journal of Semiconductors
2011年 第9期

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