纳秒级强激光对多晶硅片光吸收性能的影响

Impact of ns high power laser on the absorbency of polycrystalline silicon wafer used for solar cell

采用兆瓦级TEA CO2激光器输出的纳秒级强红外激光脉冲照射太阳能多晶硅片,用红外光谱仪测试了硅片的吸收谱,发现经激光脉冲照射后的太阳能多晶硅片对光的吸收能力大为增强,并对实验结果做出了初步的分析。

In this paper,polycrystalline silicon wafers for soalr cell are irradiated by high power infrared laser pulse which is produced by TEA CO2 laser.The pulse duration is shorter than a microsecond,so it is named ns laser pulse.Then we use infrared spectrograph to get the absorption spectrum of the silicon wafers irradiated by ns infrared laser pulse and find that its absorbency is greatly increased.The experimental results are explained with theory at last.