C^+轰击铍的分子动力学模拟

Molecular dynamics simulation of beryllium bombardment with C^+

使用分子动力学模拟方法研究了入射能量对C+离子与Be样品表面相互作用的影响。模拟结果表明,随着C+离子的入射能量增大,C+离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C+离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C+离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。

Molecular dynamic simulations were performed to study the effect of the incident energy on the interreaction of C^＋ ion with Be sample surface.The simulated results show that with increasing C^＋ incident energy,the C＋ implantation depth increases and the sputtering yield of Be increases near-linearly.However,the retention rate of C in the sample slightly changes.During the initial stage of the C^＋ bombarding Be sample,the sputtering yield of Be in sample increases sharply.With increasing exposure to C^＋,the sputtering yield of Be decreases and reaches saturation gradually.It is found that the formation of a carbon-rich layer near the sample surface region can protect beryllium sample from sputtering.