Ce∶LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

Sol-gel Synthesis and Luminescence Properties of Ce∶LSO Polycrystalline Films

采用Pechini溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce3+离子掺杂的硅酸镥(Lu2SiO5)薄膜,利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV)及椭偏(SE)测试对Ce∶Lu2SiO5薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明:薄膜样品从900℃开始晶化,1 100℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射,发射光谱是一个350～500 nm的宽带谱,宽带中心在400 nm左右。折射率、消光系数分别为1.82～1.94和0.005～0.05,厚度与SEM测试结果相一致。

Ce3＋-doped lutetium oxyorthosilicate（Ce∶Lu2SiO5） films have been fabricated on silicon（111） substrates by Pechini sol-gel method combined with the spin-coating technique.Thermogravimetry-differential scanning calorimetry（TG-DSC） analysis,X-ray diffraction（XRD）,Scanning Electron Microscopy（SEM）,PL（Photoluminescent） measurements under VUV as well as spectroscopic ellipsometry（SE） were used to characterize the resulting films.The results indicate that the Ce∶Lu2SiO5 films begin to crystallize at 900 ℃ and are completely crystallized at 1 100 ℃.The phosphor films are uniform,dense and crack-free.The VUV spectra show that the excitation is mainly host excited and the emission spectrum is a broad band centered at about 400 nm.The refractive index,the extinction of coefficient are 1.82～1.94 and 0.005～0.05,respectively,the thickness measured by spectroscopic ellipsometry is similar to that obtained by SEM.