摘要
采用Pechini溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce3+离子掺杂的硅酸镥(Lu2SiO5)薄膜,利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV)及椭偏(SE)测试对Ce∶Lu2SiO5薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明:薄膜样品从900℃开始晶化,1 100℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射,发射光谱是一个350~500 nm的宽带谱,宽带中心在400 nm左右。折射率、消光系数分别为1.82~1.94和0.005~0.05,厚度与SEM测试结果相一致。
Ce3+-doped lutetium oxyorthosilicate(Ce∶Lu2SiO5) films have been fabricated on silicon(111) substrates by Pechini sol-gel method combined with the spin-coating technique.Thermogravimetry-differential scanning calorimetry(TG-DSC) analysis,X-ray diffraction(XRD),Scanning Electron Microscopy(SEM),PL(Photoluminescent) measurements under VUV as well as spectroscopic ellipsometry(SE) were used to characterize the resulting films.The results indicate that the Ce∶Lu2SiO5 films begin to crystallize at 900 ℃ and are completely crystallized at 1 100 ℃.The phosphor films are uniform,dense and crack-free.The VUV spectra show that the excitation is mainly host excited and the emission spectrum is a broad band centered at about 400 nm.The refractive index,the extinction of coefficient are 1.82~1.94 and 0.005~0.05,respectively,the thickness measured by spectroscopic ellipsometry is similar to that obtained by SEM.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2011年第9期880-884,共5页
Chinese Journal of Luminescence
基金
上海市自然科学基金(10ZR1411400)
上海科委基础研究重点项目(9JC1406500)
上海市重点学科(S30107)
上海大学2011年度研究生创新基金(A16-0110-11-017)资助项目