RF LDMOS器件仿真与单元设计

RF LDMOS Device Simulation and Unit Design

RF LDMOS器件在GSM/CDMA移动通讯基站、数字广播电视发射、射频通讯领域应用广泛,RF LDMOS在这些领域中的地位类似于CPU在计算机和互联网领域的核心地位。尤其,RF LDMOS器件对于国防科技和军事通讯领域的意义显得更为突出。对于RF LDMOS器件进行仿真研究是当今半导体领域研制产品常用的方法。这样不但可以节约大量的人力物力财力,更为重要的是可以节约产品的开发时间,加快产品的推出和更新换代。文中采用Silvaco软件对RF LDMOS进行仿真,该器件采用0.35μm标准CMOS工艺,二层多晶场板结构,漂移区长度4.5μm,通过优化工艺条件及器件结构,实现了100V的击穿电压,射频功率密度可达1.4W/mm。

RF LDMOS is widely applied in the field of GSM/CDMA mobile communication station, digital broadcasting television emission and radio-frequency communication. The importance of RF LDMOS in these fields is similar to that of CPU in computer and internet. Especially, RF LDMOS is highly significant to defense-related science and technology and military communication. The emulation study of RF LDMOS is the popular way to develop and manufacture semiconductor products. In this way, not only a lot of human, material and money can be saved, but also the development time can be reduced so as to speed up and update the products. The paper adopted Silvaco software to emulate RF LDMOS, which is based on 0.35 μ m standard CMOS technology, two-story multi-crystal field plate structure and the length of drift region is 4.5 μm. By means of optimizing the condition and structure of items, 100V breakdown voltage is realized and the density of radio-frequency is up to 1.4W/mm.