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基于ChemCAD的三氯氢硅尾气处理过程模拟及优化

Simulation and optimization of the exhaust gas treatment process of trichlorosilane by ChemCAD
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摘要 通过ChemCAD流程模拟软件对实际年产7000 t三氯氢硅的生产流程进行模拟、分析,改进三氯氢硅合成所产生尾气的处理。原工况为合成气深冷分离废气进入三废系统,新工况将原工况的深冷后的气体压缩后再次深冷分离。使废气的排放量减小至原工艺的8%左右,减少了尾气排放的污染,产生了良好的经济和环境效益。 Process simulation of synthesis and separation of trichlorosilane is realized by ChemCAD,based on the design data of 7000t/a trichlorosilane.The treatment of the exhaust gas from trichlorosilane synthesis has been improved by simulation result.In original condition,waste gas is separated from synthesis gas cryogenically,and then piped into waste deposal system;while in new condition,cryogenic gas in original condition is further compressed and separated cryogenically.The exhaust gas emission is reduced by about 8%,which make the process more favorite in both environment and economy.
作者 吴正勇
出处 《化工进展》 EI CAS CSCD 北大核心 2011年第10期2329-2332,共4页 Chemical Industry and Engineering Progress
关键词 CHEMCAD 三氯氢硅 流程模拟 尾气处理 ChemCAD trichlorosilane process simulation exhaust gas treatment
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