B^+和BF_2^+注入预非晶硅所形成浅结的比较

COMPARISON OF SHALLOW JUNCTIONS FORMED BY B^+ AND BF_2^+ ION IMPLANTATION IN PREAMORPHIZED SILICON

剂量为1×10^(15)cm^(-2)的10keV B^+和45keV BF_2^+分别注入(100)n型预非晶硅中,随后在温度为1000和1100℃,时间为2,5和10s的条件下分别进行快速热退火.使用扩展电阻仪,对B^+和BF_2^+注入所形成浅结的结深及载流子的电激活率进行了测量、对比;通过横断面透射电镜照片,对退火后样品的剩余损伤进行了分析.

Boron of 10keV and boron-fluoride of 45keV are implanted at the dose of 1× 10^(15)cm^(-2)into self-preamorphized (100) n-typa silicon. In both boron dopants are im- planted with equivalent energy. Samples are annealed with rapid thermal annealing (RTA) subsequently at temperature of 1000℃ for 2, 5 and 10 seconds. The junction depth and carrier electrical activity of boron and boron-fluoride doped samples are compared by means of spreading resistance profile(SRP). The residual damage in samples is investigated with cross-sectional view transmission electron microscopy (FEM).