相变存储靶材的制备和镀膜性能研究

Study on Preparation and Sputtering Properties of Phase-change Materials Target

采用热压法制备Ge2Sb2Te5相变存储材料用靶材,研究了制备工艺对靶材微观结构与致密度的影响。结果表明:随保温时间的延长,靶材致密度升高。Ge2Sb2Te5靶材适宜的制备条件为570℃、10MPa、4h,在该条件下制备的靶材主相含量达到95%,致密度达到98%,可满足制备薄膜的要求。

A Ge2Sb2Te5 target was prepared by hot-press sintering,and the effects of process parameters on the phase,microstructure and relative density of the target were investigated.The results show that the density of the target increases with the increases of holding time.Pure phase and dense Ge2Sb2Te5 sputtering target was obtained at 570 ℃,10 MPa,4 h by hot-pressed sintering,with main phase content 95% and relative density 98%,which can be considered as a promising target for film deposition.