摘要
Ti species have been deposited on low-voltage etched aluminum foils by a simple electrochemical method using a Ti anode as Ti source in a Ti-free I2-dissolved acetone solution. After annealing at 500-600℃ in air, an Al2O3-TiO2 composite oxide film was formed on the surface of the etched aluminum foil by anodizing galvanostatically in an ammonium adipate solution. The effects of I2 concentration in the acetone solution, applied anode voltage, electrolysis time, and annealing temperature on the specific capacitance of the aluminum anode foils were investigated. The TiO2-deposited specimens prepared by applying a po-tential of 50V for 3 min in 2.5m MI2-added acetone solution followed by annealing at 550℃ after anodization exhibited the highest specific capacitance, with an enhancement of 22% compared with pure etched aluminum foil specimens. The electro-deposition process and the change of the anode voltage during the anodization were analyzed.
Ti species have been deposited on low-voltage etched aluminum foils by a simple electrochemical method using a Ti anode as Ti source in a Ti-free I2-dissolved acetone solution. After annealing at 500–600℃ in air, an Al2O3–TiO2 composite oxide film was formed on the surface of the etched aluminum foil by anodizing galvanostatically in an ammonium adipate solution. The effects of I2 concentration in the acetone solution, applied anode voltage, electrolysis time, and annealing temperature on the specific capacitance of the aluminum anode foils were investigated. The TiO2-deposited specimens prepared by applying a po-tential of 50V for 3 min in 2.5m MI2 -added acetone solution followed by annealing at 550℃ after anodization exhibited the highest specific capacitance, with an enhancement of 22% compared with pure etched aluminum foil specimens. The electro-deposition process and the change of the anode voltage during the anodization were analyzed.
基金
supported by the National Natural Science Foundation of China (21021002 & 51072170)
