摘要
目前,半导体单晶材料的加工多采用多线切割机进行切割。切割工艺直接影响着切割过后晶片的参数。在这些参数中,翘曲度是鉴别晶片几何参数好坏的重要指标之一。影响翘曲度的因素很多,如切割速度、砂浆密度、晶片内部应力等,在切割工序中,通过调整多线切割的工艺条件,来控制和改善晶片的翘曲度。
At present,the multi-wire saw machine is widely used in cutting silicon material field.The cutting speed take the most important role in the cutting,Different cutting speed may affect the geometry parameters of the wafer.And different cutting speed may change the quality of the wafer was mainly studied in this article.
出处
《电子工业专用设备》
2011年第9期28-30,共3页
Equipment for Electronic Products Manufacturing
关键词
多线切割
翘曲度
切割速度
Much wire cutters
Warp
The cutting speeds
