掺杂超晶格电子结构的模型研究

Studies on Models of Doping Superlattices

本文利用两种极限下的模型近似,详细描述了沿(100)、(110)和(111)方向调制生长的Si—nipi掺杂超晶格中低亚带结构和费米能级的情况。给出了(?)(-(?))》(?)和(?)(-(?))《(?)的假设(?).这类材料的电子和空穴亚带能量随掺杂浓度、掺杂层厚度及自由载流子浓度变化的普遍规律.并将两种模型下的结果进行了深入比较。

The results for lower subband energy levels and fermi energy were given for( 100), (110) and (111) oriented Si -nipi doping superlattices. Under the assumption of d.(=d,)》d,and d, (=d,)《d, ,the dependence of subband energies of electron and the hole in this material on dopant concentration,dopant layer thinkness and free carrier concentration were studied. The results in the two models were further compared with each other.