基质敏化的Er0.1Gd0.9VO4晶体的红外量子剪裁

Host sensitized infrared quantum cutting of Er_(0.1)Gd_(0.9)VO_4 crystal

研究了Er0.1Gd0.9VO4晶体材料的红外量子剪裁现象,发现了较为有趣的基质敏化的红外量子剪裁现象.即对于1537.5nm的4I13/2→4I15/2红外荧光的激发谱存在一个宽而强的337.0nm波长的激发谱峰,仔细分析可以认定337.0nm的激发峰对应着基质GdVO4材料的吸收.同时,发光谱的测量显示337.0nm光激发Er0.1Gd0.9VO4材料的基质吸收带时导致的1537.5nm4I13/2→4I15/2红外荧光的积分强度比其他所有荧光的积分强度的总和大了接近10倍,它的红外量子剪裁效率仅次于最强的2H11/2能级受激的红外量子剪裁效率且比其他能级都强.

The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article.An interesting host sensitized infrared quantum cutting phenomenon is found,that is,there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/2→4I15/2 infrared fluorescence.It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal.Meanwhile,it is found that the integral fluorescence intensity of 1537.5 nm 4I13/2→4I15/2 infrared fluorescence,when the host absorption band is excited by 337.0 nm light,is about ten times larger than that of the sum of all other fluorescence intensities.Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.