偏压对反应磁控溅射TiN薄膜结构以及性能的影响

Influence of substrate bias on the structure and performance of TiN films deposited by reactive magnetron sputtering

本文采用直流反应磁控溅射技术,以Ar和N2为反应前驱气体制备了TiN功能装饰薄膜。重点研究了衬底负偏压对沉积TiN薄膜的色泽、性能及微结构的影响。采用台阶轮廓仪、X射线衍射仪、EDS能谱仪、纳米压痕仪等分析了薄膜的粗糙度、晶相、组分、纳米硬度以及弹性模量。结果表明,采用适宜的衬底负偏压调控轰击离子能量,能够有效阻止薄膜结构中空位以及缺陷的产生,从而有效避免薄膜表面的紫黑色氧化钛的生成,有利于表面光滑的金黄色TiN薄膜制备,同时使薄膜具备更优异的力学性能。实验结果还表明基体偏压可显著影响TiN薄膜的择优生长取向:随偏压增加,薄膜由(111)晶相择优生长转变为(200)晶相的择优生长,(200)晶相的薄膜比(111)晶相薄膜具有更佳的力学性能。

Titanium nitride films were grown by reactive magnetron sputtering with nitrogen and argon as reactive precursor gases. Influence of substrate bias on the color, structure and properties of the films was studied. The phase composition, roughness, nano-hardness and elastic modulus of the films were characterized by step profiler, XRD, EDS and nano indentation tester.The results show that, an appropriate substrate bias can prevent the formation of vacancy and defect in the film structure, thus effectively avoiding the generation of purple black titanium oxide on the surface, which is beneficial to prepare smooth golden TiN film with more excellent mechanical properties. The substrate bias also has great influence on the preferred growth orientation of TiN films： with increase of the bias, the preferred growth orientation changes from （111） to （200） with better mechanical properties.