探索人工干预诱导二次形核技术制备纳米金刚石膜

Exploration of fabricating nanocrystalline diamond film by manual intervention induced secondary nucleation

围绕纳米金刚石膜生长的二次形核理论,利用直流热阴极PCVD技术,在微晶金刚石膜连续生长模式常用的一些生长条件下,通过改变工作气压,改变生长温度,同时采取人工干预间歇生长模式进行金刚石膜生长实验,探索纳米级金刚石膜制备的新途径。实验表明:在金刚石膜生成的过程中,降低工作气压或生长温度,可使等离子体激励能量减弱,导致二次形核基团比例增加,成为人工干预二次形核的内在诱因;通过调节激励电压,使等离子体能量状况改变,有利于二次形核行为的引导,成为人工干预二次形核的外在诱因,在此内外因素共同作用下,可以实现二次形核现象的有效诱导,制备出纳米金刚石膜。人工干预诱导二次形核技术制备纳米金刚石膜的实现,使纳米金刚石膜制作方法得到了扩展,也拓宽了直流热阴极PCVD技术的应用范围。

According to the second nucleation theory, the experiments of intermittent growth of nanocrystalline diamond films were carried out through changing working pressure and growth temperature and manual intervetion under usual continuous growth conditions of microcrystalline diamond films by DC hot cathode PCVD. The experiments showed that during the growth process of diamond film, the decrease of working pressure and growth temperature can make excitation energy of the plasma weaken, thus leads to the increase of the proportion of secondary nucleation groups, which becomes the internal incentives of manual intervention secondary nucleation; adjusting the excitation voltage can make the energy situation of plasma change, which is beneficial to secondary nucleation and becomes the external incentives. Under the interaction of these two incentives, the secondary nucleation can be effectively induced to fabricate the nanocrystalline diamond film. The realization of fabricating nanocrystalline diamond film by manual intervention induced secondary nucleation extends the fabricating method of nanocrystalline diamond film and application range of DC hot cathode PCVD technology.