摘要
An ultra-low specific on-resistance（R_（on,sp）） silicon-on-insulator（SOI） double-gate trench-type MOSFET （DG trench MOSFET） is proposed.The MOSFET features double gates and an oxide trench：the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide.Firstly,the double gates reduce R_（on,sp） by forming dual conduction channels.Secondly,the oxide trench not only folds the drift region,but also modulates the electric field,thereby reducing device pitch and increasing the breakdown voltage（BV）.A BV of 93 V and a R_（on,sp） of 51.8 mΩ·mm^2 is obtained for a DG trench MOSFET with a 3μm half-cell pitch.Compared with a single-gate SOI MOSFET（SG MOSFET） and a single-gate SOI MOSFET with an oxide trench（SG trench MOSFET）,the R_（on,sp） of the DG trench MOSFET decreases by 63.3%and 33.8% at the same BV,respectively.
An ultra-low specific on-resistance（R_（on,sp）） silicon-on-insulator（SOI） double-gate trench-type MOSFET （DG trench MOSFET） is proposed.The MOSFET features double gates and an oxide trench：the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide.Firstly,the double gates reduce R_（on,sp） by forming dual conduction channels.Secondly,the oxide trench not only folds the drift region,but also modulates the electric field,thereby reducing device pitch and increasing the breakdown voltage（BV）.A BV of 93 V and a R_（on,sp） of 51.8 mΩ·mm^2 is obtained for a DG trench MOSFET with a 3μm half-cell pitch.Compared with a single-gate SOI MOSFET（SG MOSFET） and a single-gate SOI MOSFET with an oxide trench（SG trench MOSFET）,the R_（on,sp） of the DG trench MOSFET decreases by 63.3%and 33.8% at the same BV,respectively.
基金
Project supported by the National Natural Science Foundation of China(Nos.60806025,60976060)
the National Key Laboratory of Analogy Integrated Circuit(No.9140C090304110C0905)
the State Key Laboratory of Electronic Thin Films and Integrated Devices, China(No.CXJJ201 004)
