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电阻阵列Flood非均匀性测试 被引量:1

Flood Nonuniformity Measurement Resistor Arrays
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摘要 在红外成像半实物仿真领域,电阻阵列一直是近20多年的研究热点,但其固有的辐射非均匀性对成像的保真度有着很大的负面影响。为了对电阻阵列进行非均匀性校正,必须对电阻阵列的非均匀性进行精确的测量。给出了电阻阵列Flood非均匀性测试法系统模型;分析了莫尔条纹的产生原因;针对非1:1映射比例下Flood非均匀性测试方法产生的莫尔条纹,提出了基于莫尔条纹预测的电阻阵列Flood非均匀性测试方法。仿真结果表明,该方法在小于1:1映射比例下可以取得很好的效果。 Resistor array has been the hot research area during the late 20 years in the field of hard-ware-in-the-loop(HWIL),of which the radiance non-uniformity is a negative effect to the scene fidelity.The resistor array non-uniformity must be measured precisely in order to correct it.The functional diagram of resistor array Flood non-uniformity measurement method was introduced;the reasons for Moiré fringes appearance was analyzed;the resistor array non-uniformity Flood measurement method based on the prediction of Moiré fringes was proposed towards the Moiré fringes.The simulation results indicate that the method achieves good effect in the mapping ratio less than 1:1.
出处 《红外技术》 CSCD 北大核心 2011年第9期517-520,共4页 Infrared Technology
基金 航空科学基金项目 编号:20080112005
关键词 电阻阵列 子像元 映射比例 莫尔条纹 FLOOD Resistor array sub pixel mapping ratio Moiré fringes Flood
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